2N6338

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509 Devices 2N6338 2N6341 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol 2N6338 100 120 2N6341 150 180 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 6.0 10 25 200 112 -65 to +175 Max. 0.875 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case RθJC 0 0 Derate linearly 1.14 W/ C for TC = +25 C and TC = +2000C 0 TO-3* (TO-204AA) Unit C/W *See appendix A for package outline 1) ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc VCE = 75 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc VCE = 150 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 180 Vdc 2N6338 2N6341 2N6338 2N6341 2N6338 2N6341 V(BR)CEO 100 150 50 Vdc ICEO µAdc ICEX IEBO 10 10 100 10 10 µAdc µAdc µAdc 2N6338 2N6341 ICEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6338, 2N6341 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics...