TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qual...
TECHNICAL DATA
PNP DARLINGTON POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol 2N6648 2N6649 2N6650 Unit
VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.0 -0.25 -10 5.0 85 -65 to +175 Max. 1.76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
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@ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Junction Temperature Range TJ, Tstg Symbol RθJC
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 33.3 mW/0C for TA > +250C 2) Derate linearly 567 mW/0C for TC > +250C
0
TO-3* (TO-204AA)
*See Appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc
Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω
V(BR)CER
Vdc
Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc
ICBO
mAdc
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2N6648, 2N6649, 2N6650 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collec...