SCHOTTKY RECTIFIER. 10BQ100PBF Datasheet

10BQ100PBF RECTIFIER. Datasheet pdf. Equivalent

10BQ100PBF Datasheet
Recommendation 10BQ100PBF Datasheet
Part 10BQ100PBF
Description SCHOTTKY RECTIFIER
Feature 10BQ100PBF; Bulletin PD-20786 rev. A 07/04 10BQ100PbF SCHOTTKY RECTIFIER 1 Amp IF(AV) = 1.0Amp VR = 100V Majo.
Manufacture International Rectifier
Datasheet
Download 10BQ100PBF Datasheet





International Rectifier 10BQ100PBF
Bulletin PD-20786 rev. A 07/04
SCHOTTKY RECTIFIER
10BQ100PbF
1 Amp
IF(AV) = 1.0Amp
VR = 100V
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Major Ratings and Characteristics
Characteristics
IF(AV) Rectangular waveform
Value
1.0
VRRM
IFSM @ tp = 5 µs sine
VF @ 1.0 Apk, TJ=125°C
TJ range
100
780
0.62
- 55 to 175
Units
A
V
A
V
°C
Description/ Features
The 10BQ100PbF surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Case Styles
10BQ100PbF
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SMB
1



International Rectifier 10BQ100PBF
10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
10BQ100PbF
100
Absolute Maximum Ratings
Parameters
10BQ
IF(AV) Max. Average Forward Current
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current
1.0
780
38
EAS Non- Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
1.0
0.5
Units Conditions
A 50% duty cycle @ TL = 152 °C, rectangular wave form
A 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
10BQ Units
Conditions
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Volatge Rate of Charge
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
0.78
0.89
0.62
0.72
0.5
1
42
2.0
10000
V @ 1A
V @ 2A
TJ = 25 °C
V @ 1A
V @ 2A
TJ = 125 °C
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
nH Measured lead to lead 5mm from package body
V/ µs
Thermal-Mechanical Specifications
Parameters
10BQ Units
Conditions
TJ Max. Junction Temperature Range (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL
Max. Thermal Resistance Junction
to Lead
(**)
36
°C/W DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
80 °C/W
wt Approximate Weight
0.10(0.003) g(oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR1J
(*)
dPtot
dTj
<
1
Rth( j-a)
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2 www.irf.com



International Rectifier 10BQ100PBF
10
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
1
10BQ100PbF
Bulletin PD-20786 rev. A 07/04
10
1
0.1
0.01
0.001
0.0001
Tj = 175˚C
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
0.00001
0
20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
T J = 25˚C
0.1
0.2 0.4 0.6 0.8
1
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
0 20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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D = 0.75
D = 0.50
10 D = 0.33
D = 0.25
D = 0.20
PDM
t1
1 t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
0.1
0.00001 0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg)
.
100
3





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