Document
Bulletin PD-21099 11/05
60EPU06PbF 60APU06PbF
Ultrafast Soft Recovery Diode
Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Lead-Free ("PbF" suffix) Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
trr = 34ns (typ) IF(AV) = 60Amp VR = 600V
Absolute Maximum Ratings
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Parameters
VR IF(AV) IFSM IFRM TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 116°C Single Pulse Forward Current, TC = 25°C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures
Max
600 60 600 120 - 55 to 175
Units
V A
°C
Square Wave, 20kHz
Case Styles
60EPU06PbF
60APU06PbF
CATHODE TO BASE 2
CATHODE TO BASE 2
1
3
1 ANODE
3 ANODE
CATHODE
ANODE
TO-247AC (Modified) www.irf.com
TO-247AC 1
60EPU06PbF/ 60APU06PbF
Bulletin PD-21099 11/05
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
600 V V V V µA µA pF IR = 100µA IF = 60A IF = 60A, TJ = 125°C IF = 60A, TJ = 175°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 600V
1.35 1.68 1.20 1.42 1.11 1.30 39 50 500 -
IR
Reverse Leakage Current
-
CT
Junction Capacitance
-
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
34 81 164 7.4 17.0 300 1394 45 nC A ns IF = 1A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 60A VR = 200V diF /dt = 200A/µs
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
RthJC RthCS Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.2 5.5 0.2 T Mounting Torque 1.2 10 Marking Device
Mounting Surface, Flat, Smooth and Greased
Min
Typ
Max
0.63
Units
K/W
g (oz) 2.4 20 N*m lbf.in
60EPU06, 60APU06
2
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60EPU06PbF/ 60APU06PbF
Bulletin PD-21099 11/05
1000
Reverse Current - I R (µA)
1000
Tj = 175˚C
100
125˚C
10 1 0.1 0.01 0.001
25˚C
Instantaneous Forward Current - I F (A)
100
T = 175˚C
J J J
0
100
200
300
400
500
600
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
T = 125˚C T = 25˚C
Junction Capacitance - C T (pF)
1000
10
T J = 25˚C
100
1 0 0.5 1 1.5 2 2.5 3
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
1
10 0 100 200 300 400 500 600
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W)
0.1
0.01 1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
60EPU06PbF/ 60APU06PbF
Bulletin PD-21099 11/05
180
Allowable Case Temperature (°C) Average Power Loss ( Watts )
140 120 100 80 60 40 20 0
0 20 40 60 80 100 Average Forward Current - IF(AV) (A)
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC RMS Limit
160 140 120
Square wave (D = 0.50)
DC
100 80% Rated Vr applied 80 see note (3) 60
0
20
40
60
80
100
Average Forward Current - IF(AV)(A) Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
3000 2500 2000
Tj = 125°C Tj = 25°C
300 Tj = 125°C Tj = 25°C If = 30A If = 60A
250
Qrr(nC)
1500 1000 500 0 10
If = 30A If = 60A
trr (ns)
200
150
100
50
100 1000
10
100
1000
dIf/ dt (A/µs) Fig. 7 - Typical Stored Charge vs. dif/dt
dIf/ dt (A/µs) Fig.87 - Typical Stored Charge vs. dif/dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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60EPU06PbF/ 60APU06PbF
Bulletin PD-21099 11/05
Reverse Recovery Circuit
VR = 200V
0.01 Ω L = 70µH D.U.T.
di F /dt dif/dt ADJUST
D G IRFP250 S
Fig. 9 - Reverse Recovery Parameter Test Circuit
3
IF 0
trr ta tb
4
Q rr
2
I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
/dt di fF/dt
1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by t rr and IRRM t x I RRM Q rr = rr 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Def.