IRF1312

PD- 94504 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current www.DataSheet4U.com IRF1312 IRF1312S IRF1312L ID 95A† VDSS 80V RDS(on) max 10mΩ TO-220AB IRF1312 D2Pak IRF1312S TO-262 IRF1312L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ˆ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 95† 67† 380 3.8 210 1.4 ± 20 5.1 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes  through ˆ Junction-to-Case Case-to-Sink, Flat, Greased Surface ‡ Junction-to-Ambient‡ Junction-to-Ambient (PCB mount)ˆ are on page 11 Typ. ––– 0.50 ––– ––– Max. 0.73 ––– 62 40 Units °C/W www.irf.com 1 7/01/02 IRF1312/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source ...