(IRF2907ZxPbF) HEXFET Power MOSFET
PD - 95489A
AUTOMOTIVE MOSFET
Features
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IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Adva...
Description
PD - 95489A
AUTOMOTIVE MOSFET
Features
l l l l l l
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 75V RDS(on) = 4.5mΩ
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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ID = 75A
TO-220AB IRF2907ZPbF
D2Pak IRF2907ZSPbF
TO-262 IRF2907ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mou...
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