HEXFET Power MOSFET
PD - 95719
IRF3717PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous...
Description
PD - 95719
IRF3717PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current
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VDSS
20V
4.4m:@VGS = 10V
A A D D D D
RDS(on) max
ID
20A
S S S G
1
8 7
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 20 16 160 2.5 1.6 0.02 -55 to + 150
Units
V
c
A W
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W/°C °C
Thermal Resistance
Parameter
RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
f
Notes through are on page 10
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1
8/10/04
IRF3717PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source R...
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