FDD6635

FDD6635 35V N-Channel PowerTrench® MOSFET March 2015 FDD6635 35V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications Inverter Power Supplies Features 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V Fast Switching RoHS compliant D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VDS(Avalanche) VGSS ID Parameter Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Ratings 35 40 ±20 59 15 100 EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 5) Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range 113 55 3.8 1.6 –55 to +150 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width FDD6635 FDD6635 D-PAK (TO-252) 13’’ 16mm Units V V V A mJ W °C °C/W °C/W °C/W Quantity 2500 units ©2007 Fairchild Semiconductor ...