FDD6637

FDD6637 35V P-Channel PowerTrench® MOSFET March 2015 FDD6637 35V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications Inverter Power Supplies Features –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V RDS(ON) = 18 mΩ @ VGS = –4.5 V High performance trench technology for extremely low RDS(ON) RoHS Compliant D D G S DTO-P-2A5K2 (TO-252) G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings VDSS VDS(Avalanche) VGSS ID PD TJ, TSTG Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) Power Dissipation @TC=25°C (Note 3) @ TA= 2 5 ° C (Note 1a) @ TA= 2 5 ° C (Note 1b) Operating and Storage Junction Temperature Range –35 –40 ±25 –55 –13 –100 57 3.1 1.3 –55 to +150 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width FDD6637 FDD6637 D-PAK (TO-252) 13’’ 16mm Units V V V A W °C °C/W Quantity 2500 units ©2006 Fairchild Semiconductor Cor...