FDH45N50F

FDH45N50F — N-Channel UniFETTM FRFET® MOSFET FDH45N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 45 A, 120 mΩ November 2013 Features RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A Low Gate Charge (Typ. 105 nC) Low Crss (Typ. 62 pF) 100% Avalanche Tested Improved dv/dt Capability Applications Lighting Uninterruptible Power Supply AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FDH45N50F_F133 VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed...