N-Channel MOSFET. FDH45N50F Datasheet

FDH45N50F Datasheet PDF, Equivalent


Part Number

FDH45N50F

Description

500V N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDH45N50F Datasheet PDF


FDH45N50F Datasheet
FDH45N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 45 A, 120 mΩ
November 2013
Features
• RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A
• Low Gate Charge (Typ. 105 nC)
• Low Crss (Typ. 62 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immuni-
ty is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter ap-
plications such as power factor correction (PFC), flat panel dis-
play (FPD) TV power, ATX and electronic lamp ballasts
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
FDH45N50F_F133
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
45
28.4
180
±30
1868
45
62.5
50
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
625
5
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2008 Fairchild Semiconductor Corporation
FDH45N50F Rev. C1
1
FDH45N50F_F133
0.2
40
Unit
°C/W
www.fairchildsemi.com

FDH45N50F Datasheet
Package Marking and Ordering Information
Part Number
FDH45N50F_F133
Top Mark
FDH45N50F
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 22.5 A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 22.5 A
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss(eff.) Effective Output Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
--
--
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 48 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 400 V, ID = 48 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 45 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 45 A,
dIF/dt =100 A/μs
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
0.105
49.0
5100
790
62
161
342
140
500
215
245
105
33
45
--
--
--
188
0.64
Max
--
--
25
250
100
-100
5.0
0.12
--
6630
1030
--
--
--
290
1010
440
500
137
--
--
45
180
1.4
--
--
Unit
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.46 mH, IAS = 48 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 45 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2008 Fairchild Semiconductor Corporation
FDH45N50F Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDH45N50F — N-Channel UniFETTM FRFET® MOSFET FDH45N50F N-Channel UniFETTM F RFET® MOSFET 500 V, 45 A, 120 mΩ Nov ember 2013 Features • RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A Low Gate Charge (Typ. 105 nC) • Low Crss (Typ. 62 pF) • 100% Avalanche T ested • Improved dv/dt Capability App lications • Lighting • Uninterrupti ble Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairch ild Semiconductor’s high voltage MOSF ET family based on planar stripe and DM OS technology. This MOSFET is tailored to reduce on-state resistance, and to p rovide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery perform ance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr i s less than 100nsec and the reverse dv/ dt immunity is 15V/ns while normal plan ar MOSFETs have over 200nsec and 4.5V/n sec respectively. Therefore, it can rem ove additional component and improve system reliability in certain applications in which t.
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