FDJ1028N

FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET August 2006 FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET Features ■ 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications ■ Battery management General Description This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 5 4 Bottom Drain Contact 3 2 1 Bottom Drain Contact S1 www.DataSheet4U.com S2 G2 6 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for single Operation (Note 1a) (Note 1a) Parameter Ratings 20 ±12 3.2 12 1.5 –55 to +150 Units V V A W °C °C/W Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Case 80 5 Packge Marking and Ordering Information Device Marking .F Device FDJ1028N Reel Size 7" Tape width 8mm Quantity 3000 units ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDJ1028N Rev. B3 (W) FDJ1028N N-Channel 2.5 Vgs Specified PowerTr...