FDMA420NZ

FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET September 2006 FDMA420NZ Single N-Channel 2.5V Specified 20V, 5.7A, 30mΩ General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. PowerTrench® MOSFET Features „ RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A „ RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A tm Applications „ Li-lon Battery Pack „ Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm „ RoHS Compliant Pin 1 D D G Source S D D 4 3 www.DataSheet4U.com Drain G D D 5 2 6 1 D D S Bottom Drain Contact MicroFET Bottom View 2X2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±12 5.7 24 0.9 2.4 -55 to +150 Units V V A W o Power dissipation (Steady State) Operating and Storage Junction Temperature Range C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 145 52 o C/W Package Marking and Ordering Information Device Marking 420 Device FDMA420NZ Reel Size 7” 1 Tape Width 12mm Quantity 3000 units www.fairchildsemi.com ©2006 Fairchild Semiconductor Corporation FDMA420NZ Rev B1 FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Electrical Characteri...