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AS4LC4M16 Datasheet, Equivalent, 16 DRAM.

4 MEG x 16 DRAM

4 MEG x 16 DRAM

 

 

 

Part AS4LC4M16
Description 4 MEG x 16 DRAM
Feature DRAM Austin Semiconductor, Inc.
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM FE ATURES
• Single +3.
3V ±0.
3V power su pply.

• Industry-standard x16 pinout, timing, functions, and package.

• 12 row, 10 column addresses
• High-perf ormance CMOS silicon-gate process
• A ll inputs, outputs and clocks are LVTTL -compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS-B EFORE-RAS (CBR) REFRESH distributed acr oss 64ms
• Optional self refresh (S) for low-power data retention
• Level 1 Moisture Sensitivity Rating, JEDEC J- STD-020 AS4LC4M16 PIN ASSIGNMENT (Top View) 50-Pin TSOP (DG) OPTIONS .
Manufacture Austin Semiconductor
Datasheet
Download AS4LC4M16 Datasheet
Part AS4LC4M16
Description 4 MEG x 16 DRAM
Feature DRAM Austin Semiconductor, Inc.
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM FE ATURES
• Single +3.
3V ±0.
3V power su pply.

• Industry-standard x16 pinout, timing, functions, and package.

• 12 row, 10 column addresses
• High-perf ormance CMOS silicon-gate process
• A ll inputs, outputs and clocks are LVTTL -compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS-B EFORE-RAS (CBR) REFRESH distributed acr oss 64ms
• Optional self refresh (S) for low-power data retention
• Level 1 Moisture Sensitivity Rating, JEDEC J- STD-020 AS4LC4M16 PIN ASSIGNMENT (Top View) 50-Pin TSOP (DG) OPTIONS .
Manufacture Austin Semiconductor
Datasheet
Download AS4LC4M16 Datasheet

AS4LC4M16

AS4LC4M16
AS4LC4M16

AS4LC4M16

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