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AS4SD16M16 Datasheet, Equivalent, DRAM Memory.16 Meg x 16 SDRAM Synchronous DRAM Memory 16 Meg x 16 SDRAM Synchronous DRAM Memory |
　
　
　
| Part | AS4SD16M16 |
|---|---|
| Description | 16 Meg x 16 SDRAM Synchronous DRAM Memory |
| Feature | SDRAM
Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Mem ory FEATURES • Full Military temp (-5 5°C to 125°C) processing available †¢ Configuration: 16 Meg x 16 (4 Meg x 1 6 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined op eration; column address can be changed every clock cycle • Internal banks fo r hiding row access/precharge • Progr ammable burst lengths: 1, 2, 4, 8 or fu ll page • Auto Precharge, includes CO NCURRENT AUTO PRECHARGE and Auto Refres h Modes • Self Refresh Mode (IT) • 64ms, 8,192-cycle refresh (IT) • < . |
| Manufacture | Austin Semiconductor |
| Datasheet |
| Part | AS4SD16M16 |
|---|---|
| Description | 16 Meg x 16 SDRAM Synchronous DRAM Memory |
| Feature | SDRAM
Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Mem ory FEATURES • Full Military temp (-5 5°C to 125°C) processing available †¢ Configuration: 16 Meg x 16 (4 Meg x 1 6 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined op eration; column address can be changed every clock cycle • Internal banks fo r hiding row access/precharge • Progr ammable burst lengths: 1, 2, 4, 8 or fu ll page • Auto Precharge, includes CO NCURRENT AUTO PRECHARGE and Auto Refres h Modes • Self Refresh Mode (IT) • 64ms, 8,192-cycle refresh (IT) • < . |
| Manufacture | Austin Semiconductor |
| Datasheet |
　
　
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