256K x 36 SSRAM Flow-Through Synchronous Burst SRAM
Austin Semiconductor, Inc. 256K x 36 SSRAM
Flow-Through, Synchronous Burst SRAM
FEATURES
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AS5SS256K36 & AS...
Description
Austin Semiconductor, Inc. 256K x 36 SSRAM
Flow-Through, Synchronous Burst SRAM
FEATURES
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AS5SS256K36 & AS5SS256K36A
PIN ASSIGNMENT (Top View)
SSRAM
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Organized 256K x 36 Fast Clock and OE\ access times Single +3.3V +0.3V/-0.165V power supply (VDD) SNOOZE MODE for reduced-power standby Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled and registered addresses, data I/Os and control signals Internally self-timed WRITE cycle Burst control (interleaved or linear burst) Automatic power-down for portable applications 100-lead TQFP package for high density, high speed Low capacitive bus loading
100-pin TQFP (DQ) (2-chip enable version, “A” indicator)
SA SA ADV\ ADSP\ ADSC\ OE\ BWE\ GW\ CLK Vss VDD SA BWa\ BWb\ BWc\ BWd\ CE2 CE\ SA SA 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100
OPTIONS
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MARKING
-8.5* -10 DQ No. 1001 A (PRELIMINARY) no indicator XT* IT
Timing 8.5ns/10ns/100MHz 10ns/15ns/66MHz ! Packages 100-pin TQFP (2-chip enable) ! Pinout 2-chip Enables 3-chip Enables ! Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC)
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DQPc DQc DQc VDDQ Vss DQc DQc DQc DQc Vss VDDQ DQc DQc Vss VDD NC Vss DQd DQd VDDQ Vss DQd DQd DQd DQd Vss VDDQ DQd DQd DQPd
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
80 79 78 77 76 75 74 73 72 71 70 69 68 ...
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