HEXFET Power MOSFET
PD- 95934
IRFD9210PbF
Lead-Free
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10/28/04
IRFD9210PbF
2
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IRFD9210...
Description
PD- 95934
IRFD9210PbF
Lead-Free
www.DataSheet4U.com
www.irf.com
1
10/28/04
IRFD9210PbF
2
www.irf.com
IRFD9210PbF
www.irf.com
3
IRFD9210PbF
4
www.irf.com
IRFD9210PbF
www.irf.com
5
IRFD9210PbF
6
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IRFD9210PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
+ +
-
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig-14 For P Channel HEXFETS
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IRFD9210PbF
Hexdip Package Outline
Dimensions are shown in millimeters (inches)
Hexdip Part Marking Information
THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER
IRFD120 XXXX
DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S IT E CODE
AS S EMBLY LOT CODE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04
8
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