IRFPS30N60KPBF

SMPS MOSFET PD- 95906 IRFPS30N60KPbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings Parameter www.DataSheet4U.com VDSS 600V RDS(on) typ. 160mΩ ID 30A Super-247™ Max. 30 19 120 450 3.6 ± 30 13 -55 to + 150 300 Units A W W/°C V V/ns ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 520 30 45 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case† Case-to-Sink, Flat, Greased Surface Junction-to-Ambient† Typ. ––– 0.24 ––– Max. 0.28 ––– 40 Units °C/W www.irf.com 1 09/15/04 IRFPS30N60KPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficie...