HEXFET Power MOSFET
PD - 95510A
IRFR3518PbF IRFU3518PbF
Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate-to-D...
Description
PD - 95510A
IRFR3518PbF IRFU3518PbF
Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
29mW
ID
30A
D-Pak IRFR3518
I-Pak IRFU3518
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Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
80 ± 20 38 27 150 110 0.71 5.2 -55 to + 175 300 (1.6mm from case )
Units
V
A W W/°C V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.4 40 110
Units
°C/W
Notes through are on page 10
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1
12/03/04
IRFR/U3518PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min....
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