XB01SB04A2BR Diode Datasheet

XB01SB04A2BR Datasheet, PDF, Equivalent


Part Number

XB01SB04A2BR

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 4 Pages
Datasheet
Download XB01SB04A2BR Datasheet


XB01SB04A2BR
XB01SB04A2BR
Schottky Barrier Diode 1A, 40V Type
ETR1601_001
GENERAL DESCRIPTION
XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for
compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.
APPLICATIONS
Rectification of compact DC/DC converter
Surge absorption caused by counter force of
compact motors
Energy-saving for notebook PCs, hand-set
Protection against reverse connection of
battery
FEATURES
1A, 40V Type
Low VF 0.49V @1A (TYP.)
Low IR 4μA @40V (TYP.)
Small Package : SOD-123
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
www.DataSheet4U.com
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous Forward Surge Current*1
Junction Temperature
VRM
VR
IF(AV)
IFSM
Tj
Storage Temperature Range
Tstg
*1: Non continuous high amplitude 60Hz half-sine wave.
RATINGS
40
40
1
10
125
-55~+150
Ta = 25
UNIT
V
V
A
A
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
LIMITS
TYP.
Forward Voltage (DC)
Reverse Current (DC)
VF
IR
IF=1A
VR=40V
0.49
4
Inter-Terminal Capacity
Ct
VR=10V, f=1MHz
35
Reverse Recovery Current *2
trr
IF=IR=10mA, irr=1mA, RL=100Ω
25
Note) 1.This product has a weakness for an electroshock such as electrostatic.
Please be careful of an electrification to human body and an electric leakage in the application.
2. *2: trr measurement circuit
MAX.
0.54
200
Ta=25
UNITS
V
μA
pF
ns
Bias
Pulse Generatrix
A
Oscilloscope
IF
trr
0
irr
IR
t
1/4

XB01SB04A2BR
XB01SB04A2BR
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Voltage vs. Forward Current
IF - VF
10
75
25
1
Ta=125
0.1 -20
0.01
0.001
0.0
0.1 0.2 0.3 0.4 0.5
Forw ard Voltage VF (V)
0.6
(2) Reverse Voltage vs. Reverse Current
IR - VR
10000
1000
Ta=125
100 75
10
1
0.1
0
25
10 20 30 40
Reverse Voltage VR (V)
50
(3) Ambient Temperature vs. Forward Voltage
VF - Ta
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-40
IF=1A
100mA
10mA
0 40 80 120 160
OAmpebraietintgTTeemmperattuurree:TTaa (OC))
200
(4) Ambient Temperature vs. Reverse Current
IR - Ta
10000
1000
100
VR=40V
20V
5V
10
1
0.1
-40
0 40 80 120 160
Ambient Temperature: Ta (OC)
200
(5) Reverse Voltage vs. Inter-Terminal Capacity
Ct - VR
Ta=25
300
200
100
0
0 10 20 30 40 50
Reverse Voltage VR (V)
2/4
(6) Ambient Temperature vs. Average Forward Current
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
IF(AV) - Ta
40 80 120
AOmpberieantint gTeTmemppeeraratuturree: TTaa (OC)
160


Features XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ETR1601_001 ■GENERAL DESCR IPTION XB01SB04A2BR employs 1A level of a schottky diode in a small package eq uivalent to SOD-123 package. It is suit able for compact, low profile circuit d esigns. By giving the series low VF and low IR characteristics, it minimizes p ower supply loss. ■APPLICATIONS ■ FEATURES 1A, 40V Type Low VF 0.49V @1A (TYP.) Low IR 4μA @40V (TYP.) Small Pa ckage : SOD-123 ●Rectification of co mpact DC/DC converter ●Surge absorpti on caused by counter force of compact m otors ●Energy-saving for notebook PCs , hand-set ●Protection against revers e connection of battery ■ABSOLUTE MA XIMUM RATINGS PARAMETER Repetitive Peak Reverse Voltage Reverse Voltage (DC) F orward Current (Average) Non Continuous Forward Surge Current*1 www.DataSheet4 U.com Ta = 25℃ RATINGS 40 40 1 10 12 5 -55~+150 UNIT V V A A ℃ ℃ SYMBOL VRM VR IF(AV) IFSM Tj Tstg Junction T emperature Storage Temperature Range *1: Non continuous high amplitude 60Hz half-sine.
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