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XB01SB04A2BR

Torex Semiconductor

Schottky Barrier Diode

XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ETR1601_001 ■GENERAL DESCRIPTION XB01SB04A2BR employs 1A level of a s...


Torex Semiconductor

XB01SB04A2BR

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Description
XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ETR1601_001 ■GENERAL DESCRIPTION XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss. ■APPLICATIONS ■FEATURES 1A, 40V Type Low VF 0.49V @1A (TYP.) Low IR 4μA @40V (TYP.) Small Package : SOD-123 ●Rectification of compact DC/DC converter ●Surge absorption caused by counter force of compact motors ●Energy-saving for notebook PCs, hand-set ●Protection against reverse connection of battery ■ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive Peak Reverse Voltage Reverse Voltage (DC) Forward Current (Average) Non Continuous Forward Surge Current*1 www.DataSheet4U.com Ta = 25℃ RATINGS 40 40 1 10 125 -55~+150 UNIT V V A A ℃ ℃ SYMBOL VRM VR IF(AV) IFSM Tj Tstg Junction Temperature Storage Temperature Range *1: Non continuous high amplitude 60Hz half-sine wave. ■ELECTRICAL CHARACTERISTICS PARAMETER Forward Voltage (DC) Reverse Current (DC) Inter-Terminal Capacity Reverse Recovery Current *2 SYMBOL VF IR Ct trr TEST CONDITIONS IF=1A VR=40V VR=10V, f=1MHz IF=IR=10mA, irr=1mA, RL=100Ω LIMITS MIN. - - - - TYP. 0.49 4 35 25 MAX. 0.54 200 - - Ta=25℃ UNITS V μA pF ns Note) 1.This product has a weakness for an electroshock such as electrostatic. Please be careful of an electrification to human body and an electric leakage in the application. 2. *2: t...




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