IRG4BC40UPBF

PD - 95428A INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40UPbF UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maxim...