PD - 94799
INSULATED GATE BIPOLAR TRANSISTOR
C
IRGB30B60K IRGS30B60K IRGSL30B60K
VCES = 600V IC = 50A, TC=100°C at TJ=...
PD - 94799
INSULATED GATE BIPOLAR
TRANSISTOR
C
IRGB30B60K IRGS30B60K IRGSL30B60K
VCES = 600V IC = 50A, TC=100°C at TJ=175°C
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
G E
tsc > 10µs, TJ=150°C
n-channel
VCE(on) typ. = 1.95V
Benefits
Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.
TO-220AB IRGB30B60K
www.DataSheet4U.com
D2 Pak IRGS30B60K
TO-262 IRGSL30B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 78 50 120 120 2500 ±20 370 180 -55 to +175
Units
V A
g
RMS Isolation Voltage, Terminal to Case, t=1 min. Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
V W
PD @ TC = 100°C Maximum Power Dissipation
°C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
–––
Typ.
––– 0.50 ––– ––– 1.44
Max....