PD - 94799
INSULATED GATE BIPOLAR TRANSISTOR
C
IRGB30B60K IRGS30B60K IRGSL30B60K
VCES = 600V IC = 50A, TC=100°C at TJ=175°C
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
G E
tsc > 10µs, TJ=150°C
n-chan...
