IRGB30B60KPBF

PD - 95356 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60KPbF IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. D2 Pak TO-220AB IRGB30B60KPbF IRGS30B60K www.DataSheet4U.com TO-262 IRGSL30B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VISOL VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 78 50 120 120 2500 ±20 370 180 -55 to +175 Units V A g ™ RMS Isolation Voltage, Terminal to Case, t=1 min. Gate-to-Emitter Voltage V W PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Wei...