PD - 9.1071
IRGBC30K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V • Swit...
PD - 9.1071
IRGBC30K
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Short circuit rated - 10µs @ 125°C, V GE = 15V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Short Circuit Rated UltraFast IGBT
VCES = 600V VCE(sat) ≤ 3.8V
@VGE = 15V, I C = 14A
n-channel
Description
Insulated Gate Bipolar
Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar
transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
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TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 23 14 46 46 10 ±20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 1...