HEXFET Power MOSFET
PD - 95745
DIGITAL AUDIO MOSFET
IRLIB9343PbF
Features
Advanced Process Technology l Key Parameters Optimized for Class...
Description
PD - 95745
DIGITAL AUDIO MOSFET
IRLIB9343PbF
Features
Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Lead-Free
l
Key Parameters
VDS RDS(ON) typ. @ VGS = -10V RDS(ON) typ. @ VGS = -4.5V Qg typ. TJ max
D
-55 93 150 31 175
V m: m: nC °C
G S
TO-220 Full-Pak
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD www.DataSheet4U.com and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current
Max.
-55 ±20 -14 ...
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