Document
PD- 91335D
IRLR/U2703
HEXFET® Power MOSFET
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Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2703) Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 30V
G S
RDS(on) = 0.045Ω ID = 23A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D-Pak TO-252AA I-Pak TO-251AA
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Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
23
16 96 45 0.30 ± 16 77 14 4.5 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
––– ––– –––
Max.
3.3 50 110
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
7/30/03
IRLR/U2703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. Typ. Max. Units Conditions 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.030 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.045 VGS = 10V, ID = 14A Ω ––– ––– 0.065 VGS = 4.5V, ID = 12A 1.0 ––– ––– V VDS = VGS, ID = 250µA 6.4 ––– ––– S VDS = 25V, ID = 14A ––– ––– 25 VDS = 30V, VGS = 0V µA ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 15 .