IRLR8503

IRLPRD-893580393C IRLR8503 N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications 100% RG Tested HEXFET® MOSFET for DC-DC Converters D Description G This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. S D-Pak The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dtinduced turn-on immunity. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. DEVICE RATINGS (MAX. Values) VDS RDS(on) QG QSW QOSS IRLR8503 30V 18 mΩ 20 nC 8 nC 29.5 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current ™ Pulsed Drain Current TC = 25°C TC = 90°C Power Dissipation gÃÃÃÃÃÃÃÃÃÃÃTC = 25°C TC = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) ™ Pulsed Source Current Thermal Resistance Parameter eÃh Maximum Junction-to-Ambient h Maximum Junction-to-Lead Symbol VDS VGS...