STN2907S

Semiconductor STN2907S PNP Silicon Transistor Descriptions General purpose application Switching application Features Large collector current: IC=-600mA Low collector saturation voltage: VCE(sat)=-0.4V(Max.) @ IC=-150mA, IB=-15mA Complementary pair with STN2222S Ordering Information Type NO. STN2907S Marking GA Package Code SOT-23 Outline Dimensions unit : mm www.DataSheet4U.com 1 3 2 PIN Connections 1. Base 2. Emitter 3. Collector KST-2056-003 1 STN2907S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% Alumina 10×8×0.6mm. (Ta=25°C) Symbol VCBO VCEO VEBO IC PC* TJ Tstg Rating -60 -40 -5 -600 350 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob Test Condition IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-60V, IE=0 VCE=-10V, IC=-10mA IC=-150mA, IB=-15mA VCE=-20V, IC=-20mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -60 -40 -5 75 250 6.0 -10 -0.4 - Unit V V V nA V MHz pF KST-2056-003 2 STN2907S Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - V...