STN2NE10

® STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STN2NE10 s s s s s V DSS 100 V R DS(on) < 0.4 Ω ID 2A TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. www.DataSheet4U.com 1 SOT-223 2 3 APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS ID ID I DM ( ) P tot dv/dt(1 ) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 2 1.3 8 2.5 0.02 6 -65 to 150 150 (1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C () Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 Janua...