STN2NF10

N-CHANNEL 100V - 0.23Ω - 2A SOT-223 STripFET™ II POWER MOSFET STN2NF10 TYPE STN2NF10 s VDSS 100 V RDS(on) < 0.26 Ω ID 2A TYPICAL RDS(on) = 0.23 Ω 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC-DC & DC-AC COVERTERS s DC MOTOR CONTROL (DISK DRIVERS, etc.) s SYNCHRONOUS RECTIFICATION s 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM() Ptot EAS(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 2 1.26 8 2.5 0.02 300 -65 to 150 150 (1) ISD ≤1A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX Unit V V V A A A W W/°C mJ °C °C () Pulse width limited by safe operating area. () Current limited by the package December 2001 . 1/8 STN2NF10 THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB (1 inch2 copper board) Thermal Resistance Junction-PCB (min. footprint) Maximum Lead Temperatu...