RB521G30-G

SMD Schottky Barrier Diode RB521G30-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 100 mA Features: Small Surface Mounting Type High Reliability E1 L θ c E2 E b D + - SOD-723 Mechanical Data: Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method 2026.1. Polarity: Indicated by cathode band. Mounting position: Any. Marking: F θ Symbol A A1 b c D E E1 E2 L θ Inches A1 A Millimeters Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7º REF Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7º REF Maximum Ratings (at TA=25ºC unless otherwise specified) www.DataSheet4U.com Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR Io IFSM TJ Tstg Limits 30 100 1 125 -40~+125 Unit V mA A ºC ºC Electrical Ratings (at TA=25ºC unless otherwise specified) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.35 10 Unit V μA Conditions IF=10mA VR=10V “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Schottky Barrier Diode RB521G30-G (RoHS Device) Electrical Characteristic Curves (RB521G30-G) Fig. 1 Forward Characteristics 1 125ºC Fig. 2 Reverse Characteristics 10m 125ºC 100m 1m Reverse Current (A) Forward Current (A) 75º...