AO4701

July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. Features VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = 10V) RDS(ON) < 64mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D K A A S G 1 2 3 4 8 7 6 5 K K D D G SOIC-8 www.DataSheet4U.com S A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 ±12 -5 -4.2 -30 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 2 1.44 -55 to 150 Typ 48 74 35 49 72 37 30 4.4 3.2 30 2 1.44 -55 to 150 Max 62.5 110 40 62.5 110 42 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Maximum Junction-to-Ambient °C/W Alpha & Omega Semiconductor, Ltd. AO4701 E...