AO4705

AO4705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4705 is Pb-free (meets ROHS & Sony 259 specifications). AO4705L is a Green Product ordering option. AO4705 and AO4705L are electrically identical. A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G S A Features VDS (V) = -30V ID = -10A (VGS = -10V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 16mΩ (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 5A, VF<0.52V@3A D K SOIC-8 www.DataSheet4U.com Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 ±25 -10 -8 -60 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 3 2 -55 to 150 Typ 28 54 21 36 67 25 30 5 3.5 30 3 2 -55 to 150 Max 40 75 30 40 75 30 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum...