AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4707 uses advanc...
AO4707 P-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO4707 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications). AO8820L is a Green Product ordering option. AO8820 and AO8820L are electrically identical.
A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G S A
Features
VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.52V@3A
D
K
SOIC-8
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Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current
B A
MOSFET -30 ±20 -8 -6.6 -40
Schottky
Units V V A
VGS TA=70°C ID IDM VKA TA=25°C
A
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Thermal Characteristics
Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
A A C B
TA=70°C TA=25°C TA=70°C
IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 3 2 -55 to 150 Typ 24 54 21 36 67 25
30 5 3.5 30 3 2 -55 to 150 Max 40 75 30 40 75 30
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