AO4813

AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4813 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4813 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (VGS = -10V) ID = -7.1 A RDS(ON) < 25mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 www.DataSheet4U.com G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B B Maximum -30 ±20 -7.1 -5.6 -30 2 1.28 11 18 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C B ID IDM PD IAR EAR TJ, TSTG W A mJ °C Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4813 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-7.1A RDS(ON) gFS V...