AO4816

AO4816 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications). AO4816L is a Green Product ordering option. AO4816 and AO4816L are electrically identical. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 20V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 46mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www.DataSheet4U.com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM Power Dissipation TA=25°C TA=70°C PD TJ, TSTG Maximum 30 ±25 8.5 6.5 40 2 1.28 -55 to 150 Units V V A W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA C Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 33 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4816 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=20V, I D=8.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=...