AO4840

AO4840 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4840 uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4840 is Pb-free (meets ROHS & Sony 259 specifications). AO4840L is a Green Product ordering option. AO4840 and AO4840L are electrically identical. Features VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) RDS(ON) < 45m Ω (VGS=4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 D1 SOIC-8 www.DataSheet4U.com S1 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation TA=25°C TA=70°C B Max 40 ±20 6 5 20 2 1.28 -55 to 150 Units V V A VGS ID IDM PD TJ, TSTG TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C W °C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4840 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=32V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Tran...