AO4844 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4844 uses advanced trench techn...
AO4844 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4844 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4844 is Pb-free (meets ROHS & Sony 259 specifications). AO4844L is a Green Product ordering option. AO4844 and AO4844L are electrically identical.
Features
VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V)
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1
D2
SOIC-8
www.DataSheet4U.com
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Lead TA=25°C TA=70°C ID IDM PD TJ, TSTG
Maximum 30 ±20 6.9 5.8 30 2 1.44 -55 to 150
Units V V A 5.8554
W °C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 48 74 35
Max 62.5 110 40
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4844
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resist...