MOSFET. AO4600 Datasheet

AO4600 MOSFET. Datasheet pdf. Equivalent

AO4600 Datasheet
Recommendation AO4600 Datasheet
Part AO4600
Description MOSFET
Feature AO4600; AO4600 Complementary Enhancement Mode Field Effect Transistor General Description The AO4600 uses ad.
Manufacture Alpha & Omega Semiconductors
Datasheet
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Alpha & Omega Semiconductors AO4600
AO4600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4600 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 6.9A (VGS = 10V) -5A (VGS = -10V)
RDS(ON)
< 27m
< 49m(VGS =- 10V)
< 32m
< 64m(VGS =- 4.5V)
< 50m
< 120m(VGS = -2.5V)
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S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
6.9
5.8
40
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.44
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO4600
AO4600
n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=250µA, VGS=0V
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5A
TJ=55°C
TJ=125°C
30
0.7
25
1
5
100
1 1.4
22.6
33
27
42
27
40
32
50
V
µA
nA
V
A
m
m
m
gFS Forward Transconductance
VDS=5V, ID=5A
VSD Diode Forward Voltage
IS=1A
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery time
Qrr Body Diode Reverse Recovery charge
VGS=4.5V, VDS=15V, ID=6.9A
VGS=10V, VDS=15V, RL=2.2,
RGEN=6
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
12 16
0.71
1
3
S
V
A
858
110
80
1.24
1050
4
pF
pF
pF
9.6
1.65
3
5.7
13
37
4.2
15.5
7.9
12
20
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 4 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO4600
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
3V
4.5V
2.5V
20
16 VDS=5V
12
15
10 VGS=2V
5
0
012345
8
125°C
4
25°C
0
0 0.5 1 1.5 2 2.5 3
VDS (Volts)
Fig 1: On-Region Characteristics
VGS (Volts)
Figure 2: Transfer Characteristics
60
50 VGS=2.5V
40
30 VGS=4.5V
20
VGS=10V
10
0
5 10 15 20
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0
ID=5A
VGS=4.5V
VGS=10V
VGS=2.5V
50 100 150
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
200
70
60 ID=5A
50
40 125°C
30
20 25°C
10
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
1.0E-06
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD (Volts)
Figure 6: Body diode characteristics
Alpha & Omega Semiconductor, Ltd.





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