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AO4601 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications). AO4601L is a Green Product ordering option. AO4601 and AO4601L are n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -8A (VGS = -20V) RDS(ON) RDS(ON) < 55m Ω (VGS=10V) < 18mΩ (VGS = -20V) < 70m Ω (VGS=4.5V) < 19mΩ (VGS = -10V) < 110m Ω (VGS = 2.5V)
Features
D2 S2 G2 S1 G1
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D1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2 S2
G1 S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -30 ±25 -8 -6.9 -50 2 1.44 -55 to 150
Units V V A
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
±12 4.7 4 30 2 1.44 -55 to 150
W °C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RθJA RθJL RθJA RθJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 52 78 48 50 73 31
Max Units 62.5 °C/W 110 °C/W 60 °C/W 62.5 110 40 °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4601
n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=4A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3A VGS=2.5V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.6 10 45 66 55 83 8 0.8 1 2.5 390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54.5 41 3 0.6 VGS=4.5V, VDS=15V, ID=4A 1.38 4.34 3.3 VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω IF=4A, dI/dt=100A/µs 1 21.7 2.1 12 6.3 55 80 70 110 1 Min 30 1 5 100 1.4 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4601 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 12 9 ID (A) 2.5V 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 Normalized On-Resistance 125 VGS=2.5V RDS(ON) (mΩ ) 100 75 50 25 0 0 2 4 6 8 10 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 VGS=4.5V 1.8 ID(A) 10 10V 3V 4.5V 6 8 VDS=5V
4 125°C VGS=2V 2 25°C 0 0.5 1 1.5 2 2.5 3 3.5
0
VGS(Volts) Figure 2: Transfer Characteristics
1.6
VGS=4.5V VGS=10V
1.4
1.2
VGS=2.5V
VGS=10V
1
1.0E+01 1.0E+00
150 RDS(ON) (mΩ )
ID=2A IS (A)
1.0E-01 125°C 1.0E-02 1.0E-03 25°C 1.0E-04
100
125°C
50
25°C 1.0E-05
0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha and Omega Se.