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MOSFET. AO4607 Datasheet |
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AO4607
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n-
channel FET to minimize body diode
losses. AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
Features
n-channel
VDS (V) = 30V
ID = 6.9A (VGS=10V)
RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
p-channel
-30V
-6A (VGS=1-0V)
RDS(ON)
< 35mΩ (VGS = -10V)
< 58mΩ (VGS =- 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
www.DataSheet4U.com
S2/A 1 8 D2/K
G2 2 7 D2/K
S1 3 6 D1
G1 4 5 D1
SOIC-8
D
K
GA
S2
n-channel
D
G
S
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
6.9
5.8
30
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.28
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6
-5
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Diode Forward CurrentB
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
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AO4607
Thermal Characteristics: n-channel, Schottky and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t ≤ 10s
Steady-State
RθJL
RθJA
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t ≤ 10s
Steady-State
RθJL
RθJA
Maximum Junction-to-Lead C
Steady-State
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Schottky
Schottky
Schottky
Typ
48
74
35
48
74
35
47.5
71
32
Max
62.5
110
60
62.5
110
40
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
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AO4607
N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
VR=30V
VR=30V, TJ=125°C
VR=30V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
gFS Forward Transconductance
VDS=5V, ID=6.9A
VSD Body-Diode+Schottky Forward Voltage
IS=1A
IS Maximum Body-Diode+Schottky Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance (FET+Schottky)
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body-Diode+Schottky Reverse Recovery Time
Qrr Body-Diode+Schottky Reverse Recovery Charge
VGS=10V, VDS=15V, ID=6.9A
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
IF=6.9A, dI/dt=100A/µs
IF=6.9A, dI/dt=100A/µs
Min
30
1
20
10
Typ
0.007
3.2
12
1.9
22.5
31.3
34.5
15.4
0.45
680
131
77
3
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
13.7
4.1
Max
0.05
10
20
100
3
28
38
42
0.5
5.5
820
3.6
16.6
16.5
Units
V
mA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides
a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev 4: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
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