AO4607

AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the nchannel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical. S2/A G2 S1 G1 www.DataSheet4U.com Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=1-0V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS =- 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 D K A S2 D G G SOIC-8 S n-channel p-channel Max p-channel -30 ±20 -6 -5 -30 2 1.28 -55 to 150 Units V V A W °C Units V A W °C Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 6.9 TA=25°C A Current TA=70°C 5.8 ID B Pulsed Drain Current IDM 30 TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward TA=25°C A Current TA=70°C Pulsed Diode Forward CurrentB Power Dissipation A PD TJ, TSTG Symbol VDS ID IDM PD TJ, TSTG 2 1.28 -55 to 150 Maximum Schottky 30 3 2 20 2 1.28 -55 to 150 TA=25°C TA=70°C Junction and Storage Temperature Rang...