MOSFET. AO4610 Datasheet

AO4610 MOSFET. Datasheet pdf. Equivalent

AO4610 Datasheet
Recommendation AO4610 Datasheet
Part AO4610
Description MOSFET
Feature AO4610; AO4610 Complementary Enhancement Mode Field Effect Transistor General Description The AO4610 uses ad.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4610 Datasheet





Alpha & Omega Semiconductors AO4610
AO4610
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses.Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
Features
n-channel
VDS (V) = 30V
ID = 8.5A(VGS=10V)
RDS(ON)
< 18m(VGS=10V)
< 28m(VGS=4.5V)
VF<0.5V@1A
p-channel
-30V
-7.1A(VGS = -10V)
RDS(ON)
< 25m(VGS = -10V)
< 40m(VGS = -4.5V)
D2 D1
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S2/A 1 8 D2/K
G2 2 7 D2/K
S1 3 6 D1
G1 4 5 D1
SOIC-8
K
G2 A
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
8.5
6.6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.28
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-7.1
-5.6
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward CurrentB
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO4610
AO4610
Thermal Characteristics: n-channel, Schottky and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
RθJL
RθJA
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
RθJL
RθJA
Maximum Junction-to-Lead C
Steady-State
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Schottky
Schottky
Schottky
Typ
48
74
35
48
74
35
47.5
71
32
Max
62.5
110
60
62.5
110
40
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO4610
AO4610
N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
VGS=4.5V, ID=6.6A
Forward Transconductance
VDS=5V, ID=8.5A
Body-Diode+Schottky Forward Voltage
IS=1A
Maximum Body-Diode+Schottky Continuous Current
TJ=55°C
TJ=125°C
30
1
40
10
25
100
1.8 3
15.5
22.3
23
23
0.75
18
27
28
1
5.5
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance (FET+Schottky)
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1040
180
110
0.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body-Diode+Schottky Reverse Recovery Time
Qrr Body-Diode+Schottky Reverse Recovery Charge
VGS=10V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8,
RGEN=3
IF=8.5A, dI/dt=100A/µs
IF=8.5A, dI/dt=100A/µs
19.2
9.36
2.6
4.2
5.2
4.4
17.3
3.3
16.7
6.7
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
IF=1.0A
0.45 0.5
V
Irm Maximum reverse leakage current
VR=30V
VR=30V, TJ=125°C
0.007 0.05
3.2 10
mA
VR=30V, TJ=150°C
12 20
CT Junction Capacitance
VR=15V
37 pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides
a single pulse rating.
Rev 4: July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.





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