AO4610

AO4610 Complementary Enhancement Mode Field Effect Transistor General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical. Features n-channel VDS (V) = 30V ID = 8.5A(VGS=10V) RDS(ON) < 18mΩ (VGS=10V) < 28mΩ (VGS=4.5V) VF<0.5V@1A p-channel -30V -7.1A(VGS = -10V) RDS(ON) < 25mΩ (VGS = -10V) < 40mΩ (VGS = -4.5V) D2 S2/A G2 S1 G1 www.DataSheet4U.com D1 K 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 A G1 S1 SOIC-8 n-channel p-channel Max p-channel -30 ±20 -7.1 -5.6 -30 2 1.28 -55 to 150 Units V V A W °C Units V A W °C Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 8.5 TA=25°C A Current 6.6 TA=70°C ID B Pulsed Drain Current IDM 30 2 TA=25°C PD TA=70°C 1.28 Power Dissipation Junction and Storage Temperature Range TJ, TSTG -55 to 150 Parameter Reverse Voltage Continuous Forward A Current Symbol VDS ID IDM PD TJ, TSTG TA=25°C TA=70°C B Pulsed Forward Current Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range A Maximum Schottky 30 3 2 20 2 1.28 -55 to 150 Alpha & Om...