AO4611

AO4611 Complementary Enhancement Mode Field Effect Transistor General Description The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications). AO4611L is a Green Product ordering option. AO4611 and AO4611L are electrically identical. Features n-channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25m Ω (VGS=10V) < 30m Ω (VGS=4.5V) p-channel -60V -4.9A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 ±20 -4.9 -3.9 -30 2 1.28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±20 6.3 5 40 2 1.28 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL ...