AO4612

AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.5V) 100% Rg tested SOIC-8 Top View Bottom View D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Symbol RqJA Maximum Junction-to-Lead C Steady-State RqJL Max n-channel 60 ±20 4.5 3.6 20 2 1.28 -55 to 150 Max p-channel -60 ±20 -3.2 -2.6 -20 2 1.28 -55 to 150 Typ Max 48 62.5 74 90 35 40 Units V V A W °C Units °C/W °C/W °C/W Rev 4.0: August. 2019 www.aosmd.com Page 1 of 9 AO4612 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero...