AO4614

AO4614 Complementary Enhancement Mode Field Effect Transistor General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications). AO4614L is a Green Product ordering option. AO4614 and AO4614L are electrically identical. Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -40 ±20 -5 -4 -20 2 1.28 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±20 6 5 20 2 1.28 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74...