AO4615

AO4615 Complementary Enhancement Mode Field Effect Transistor General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-free (meets ROHS & Sony 259 specifications). AO4615L is a Green Product ordering option. AO4615 and AO4615L are electrically identical Features n-channel p-channel VDS (V) = 30V -30V -5.7A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 39m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 62m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) P-channel MOSFET has an additional ROC < 1MΩ for open circuit protection. D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 ROC S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain A Current Pulsed Drain Current Power Dissipation Avalanche Current B B Max p-channel -30 ±20 -5.7 -4.9 -30 2 1.44 20 20 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C B 7.2 ID IDM PD IAR EAR TJ, TSTG 6.1 30 2 1.44 15 11 -55 to 150 W A mJ °C Repetitive avalanche energy 0.1mH Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum J...