AO4624

AO4624 Complementary Enhancement Mode Field Effect Transistor General Description The AO4624 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4624 is Pb-free (meets ROHS & Sony 259 specifications). AO4624L is a Green Product ordering option. AO4624 and AO4624L are electrically identical. Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=-10V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain A Current Pulsed Drain Current Power Dissipation B Avalanche Current B Max p-channel -30 ±20 -6 -5 -30 2 1.44 20 20 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C B 6.9 ID IDM PD IAR EAR TJ, TSTG 5.8 30 2 1.44 15 11 -55 to 150 W A mJ °C Repetitive avalanche energy 0.1mH Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Amb...