AO4700

AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous DC-DC conversion applications. Standard Product AO4700 is Pb-free (meets ROHS & Sony 259 specifications). AO4700L is a Green Product ordering option. AO4700 and AO4700L are electrically identical. D A A S G 1 2 3 4 8 7 6 5 K K D D Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 4A, VF<0.5V@3A K G S A SOIC-8 www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current B MOSFET 30 ±20 6.9 5.8 30 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Schottky reverse voltage Continuous Forward Current A Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A B 30 4 2.6 2 1.28 -55 to 150 Typ 48 74 35 44 73 31 ...