HSB285S

HSB285S Silicon Schottky Barrier Diode for High frequency detection REJ03G0010-0100Z Rev.1.00 Apr,16.2003 Features Low forward voltage, Low capacitance and High detection sensitivity. HSB285S which is interconnected in series configuration. is designed for voltage doubler use. CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB285S Laser Mark S3 Package Code CMPAK Pin Arrangement www.DataSheet4U.com 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00, Apr.16.2003, page 1 of 5 HSB285S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VR IO * Tj Tstg 1 Value 2 5 125 –55 to +125 Unit V mA °C °C Electrical Characteristics *1 (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Capacitance ESD-Capability * www.DataSheet4U.com Min — — — 10 Typ — — 0.3 — Max 0.15 0.27 — — Unit V Test Condition IF = 0.1 mA IF = 1 mA VR = 1 V, f = 1 MHz C = 200 pF, RL = 0 Ω, Both forward and reverse direction 1 pulse. C 2 pF V — Notes: 1. Per one device 2. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V Rev.1.00, Apr.16.2003, page 2 of 5 HSB285S Main Characteristic 10–2 10–2 Reverse current IR (A) Forward current IF (A) 10–3 10–3 Ta = 75°C 10–4 10–4 Ta = 25°C 10–5 10–5 10–6 0 0.1 0.2 0.3 0.4 0.5 10–6 0 1 2 3 4 5 Forward voltage VF (V) Fig.1 Forward current vs. Forward ...