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2SD2061 Datasheet, Equivalent, Transistor.Transistor Transistor |
| Part | 2SD2061 |
|---|---|
| Description | Transistor |
| Feature | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO. , LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low satura tion voltage z Excellent DC current gai n characteristice 2. COLLECTOR 3. EMIT TER MAXIMUM RATINGS (TA=25℃ unless o therwise noted) Symbol VCBO VCEO VEBO I C PC www. DataSheet4U. com Paramenter Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dis sipation Junction Temperature Storage T emperature Range Value 80 60 5 3 2 150 -55-150 Units V V V A W ℃ ℃ Tj Tstg ELECTRICAL CHA . |
| Manufacture | Jiangsu Changjiang Electronics |
| Datasheet |
| Part | 2SD2061 |
|---|---|
| Description | Transistor |
| Feature | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO. , LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low satura tion voltage z Excellent DC current gai n characteristice 2. COLLECTOR 3. EMIT TER MAXIMUM RATINGS (TA=25℃ unless o therwise noted) Symbol VCBO VCEO VEBO I C PC www. DataSheet4U. com Paramenter Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dis sipation Junction Temperature Storage T emperature Range Value 80 60 5 3 2 150 -55-150 Units V V V A W ℃ ℃ Tj Tstg ELECTRICAL CHA . |
| Manufacture | Jiangsu Changjiang Electronics |
| Datasheet |
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