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Transistor. 2SD2061 Datasheet |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2061 TRANSISTOR (NPN)
FEATURES
z Low saturation voltage
z Excellent DC current gain characteristice
TO-220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
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Tstg
Paramenter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
80
60
5
3
2
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=50µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50µA, IC=0
ICBO
VCB=60V, IE=0
IEBO
VEB=4V, IC=0
hFE VCE=5V, IC=0.5A
VCE(sat) IC=2A, IB=0.2A
VBE(sat) IC=2A, IB=0.2A
fT VCE=5V, IC=0.5A, f=5MHz
Cob VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
80 V
60 V
5V
10 µA
10 µA
100 320
1V
1.5 V
8 MHz
70 pF
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Typical Characteristics
2SD2061
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